, u nc. 20 stern ave. springfield, new jersey 07081 u s a silicon npn power transistor telephone: (973) 376-2922 (212)227-6005 BDY46 description ? collector-emitter breakdown voltage- : v(br)ceo= 300v(min.) ? dc current gain- : hfe=20(min.)@lc = 2a ? collector-emitter saturation voltage- :vce silicon npn power transistor BDY46 electrical characteristics tc=25'c unless otherwise specified symbol v(br)ceo v(br)cbo v(br)ebo vce(sat) vee(sat) icbo hf6-1 hfe-2 fy parameter collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current dc current gain dc current gain current gain-bandwidth product conditions lc= 200ma; ib= 0 lc=1ma;le=0 ie= 2ma; lc= 0 lc= 15a; ib= 5a lc= 15a; la= 5a vcb= 600v; ie= 0 vcb= 600v; ie= 0, t0=150'c lc= 2a; vce= 2v lc=10a;vce=2v lc=0.5a; vce=10v min 300 600 7 20 5 10 max 1.5 2.0 0.2 2.5 unit v v v v v ma mhz switching times ton tf w turn-on time fall time turn-off time |c=5a;ib1=-ib2=1a 0.5 1.0 3.5 n s us us
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